Irf840 Schaltplan. Mouser offers inventory pricing datasheets for irf840 mosfet. Absolute maximum ratings ta 25 c symbol vdss vgs id i dm pd tj tstg parameter.
B irf840 8a 500v 0 850 ohm n channel power mosfet this n channel enhancement mode silicon gate power field effect transistor is an advanced power mosfet designed tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. Irf840 mosfet are available at mouser electronics. Irf840 500 v 0 85 ω 8 a symbol parameter value unit vds drain source voltage vgs 0 500 v vdgr drain gate voltage rgs 20 kω 500 v vgs gate source voltage 20 v id drain current continuos at tc 25 c 8a id drain current continuos at tc 100 c 5 1 a idm l drain current pulsed 32 a ptot total dissipation at tc 25 c 125 w.
Philips semiconductors product specification powermos transistor irf840 avalanche energy rated features symbol quick reference data d repetitive avalanche rated fast switching vdss 500 v high thermal cycling performance low thermal resistance id 8 5 a g rds on 0 85 ω s general description pinning sot78 to220ab n channel enhancement mode pin descript.
Philips semiconductors product specification powermos transistor irf840 avalanche energy rated features symbol quick reference data d repetitive avalanche rated fast switching vdss 500 v high thermal cycling performance low thermal resistance id 8 5 a g rds on 0 85 ω s general description pinning sot78 to220ab n channel enhancement mode pin descript. Absolute maximum ratings ta 25 c symbol vdss vgs id i dm pd tj tstg parameter. Irf840 sihf840 absolute maximum ratings tc 25 c unless otherwise noted parameter symbol limit unit drain source voltage vds 500 v gate source voltage vgs 20 v continuous drain current vgs at 10 v tc 25 c id 8 0 tc 100 c 5 1 a pulsed drain current a idm 32 linear derating factor 1 0 w c single pulse avalanche energy b eas 510 mj. The irf840 is an n channel power mosfet which can switch loads upto 500v.
